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| STS8235 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 4.5A RDS(ON) (m) Max 36 @ VGS=4.5V 46 @ VGS=2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S OT26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 10 TA=25C TA=70C TA=25C TA=70C 4.5 3.6 18 a Units V V A A A A W C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 C/W Details are subject to change without notice. Aug,14,2008 1 www.samhop.com.tw STS8235 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= 10V , VDS=0V 1 10 0.5 0.7 30 36 15 440 80 56 10 12.5 15.5 30 6.7 4.6 1.5 2.2 1.25 0.78 1.2 1.5 36 46 uA uA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A V VDS=VGS , ID=250uA VGS=4.5V , ID=4.5A VGS=2.5V , ID=4A VDS=5V , ID=4.5A Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd IS VSD Total Gate Charge VDS=15V,VGS=0V f=1.0MHz VDD=15V ID=1A VGS=4.5V RGEN=10 ohm VDS=15V,ID=4.5A,VGS=4.5V VDS=15V,ID=4.5A,VGS=2.5V Gate-Source Charge VDS=15V,ID=4.5A, VGS=4.5V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b VGS=0V,IS=1.25A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Aug,14,2008 2 www.samhop.com.tw STS8235 Ver 1.0 20 V G S = 4.5V V G S = 2.5V V G S =2 V 15 ID, Drain Current(A) ID, Drain Current(A) 16 12 12 9 8 V G S = 1.5V 6 125 C 3 25 C 0 -55 C 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.4 0.8 1.2 1.6 2.0 2.4 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =4.5V ID= 4.5A V G S =2.5V ID=4A RDS(on)(m ) 40 30 VG S =2.5V VG S =4.5V 20 10 1 1 4 8 12 16 20 RDS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S ID=250uA 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,14,2008 3 www.samhop.com.tw STS8235 Ver 1.0 90 75 20.0 Is, Source-drain current(A) ID=4.5A 25 C 10.0 5.0 RDS(on)(m ) 60 45 30 75 C 15 0 25 C 125 C 125 C 75 C 1.0 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 500 C, Capacitance(pF) C is s 8 6 4 2 0 0 VDS = 15V ID=4.5A 400 300 200 C rs s 100 0 0 2 4 6 8 10 12 Cos s 1 2 3 4 5 6 7 8 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 50 10 ID, Drain Current(A) Tr TD(off) Tf TD(on) Switching Time(ns) 100 60 10 RD S ( ) ON L im it 10 10 s 1 0 ms 0m s DC 0u 1m s 1 1 1 6 10 V DS =15V ,ID=1A V G S =4.5 V 0.1 VGS =4.5V S ingle P ulse T A=25 C 1 10 30 100 60 100 300 600 0.1 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,14,2008 4 www.samhop.com.tw STS8235 Ver 1.0 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 100 1000 Square Wave Pulse Duration(sec) Figure 15. Normalized Thermal Transient Impedance Curve Aug,14,2008 5 www.samhop.com.tw STS8235 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT26 Aug,14,2008 6 www.samhop.com.tw STS8235 Ver 1.0 SOT26 Carrier Tape SOT26 Tape and Reel Data SOT26 Reel Aug,14,2008 7 www.samhop.com.tw |
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